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  15GN01NA no. a1105-1/5 features small on-resistance [ron=2 (i b =3ma)]. small output capacitance [cob=1.3pf (v cb =10v)]. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo 15 v collector-to-emitter voltage v ceo 8v emitter-to-base voltage v ebo 3v collector current i c 50 ma collector dissipation p c 400 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =10v, i e =0a 0.5 a emitter cutoff current i ebo v eb =2v, i c =0a 0.5 a dc current gain h fe v ce =5v, i c =10ma 200 400 gain-bandwidth product f t v ce =5v, i c =10ma 1.0 1.5 ghz output capacitance cob v cb =10v, f=1mhz 1.3 pf collector-to-emitter saturation voltage v ce (sat) i c =20ma, i b =2ma 0.06 0.12 v base-to-emitter saturation voltage v be (sat) i c =20ma, i b =2ma 0.85 1.0 v output on resistance ron i b =3ma, f=10khz 2.0 marking : za sanyo semiconductors data sheet www.semiconductor-sanyo.com/network ordering number : ena1105 o2809ab tk im tc-00002117 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 15GN01NA npn epitaxial planar silicon transistor vhf to uhf band high-frequency switching, high-frequency general-purpose amplifier applications
15GN01NA no. a1105-2/5 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 base-to-emitter voltage, v be -- v collector current, i c -- ma it06248 i c -- v be 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 2 3 4 5 6 7 8 9 10 collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce it06247 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 5 10 15 20 25 30 35 40 45 50 collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce it06246 i b =0ma 0.05ma 0.10ma 0.15ma 0.20ma 0.25ma 0.30ma v ce =5v 5 7 100 2 3 h fe -- i c 1.0 23 57 23 57 10 23 57 100 collector current, i c -- ma dc current gain, h fe it05405 v ce =5v i b =0 a 5 a 10 a 15 a 20 a 25 a 30 a 35 a 40 a 45 a package dimensions marking unit : mm (typ) 7522-003 123 5.0 4.0 4.0 0.45 0.45 0.44 0.5 1.3 1.3 5.0 0.6 2.0 14.0 1 : base 2 : emitter 3 : collector sanyo : np 1 : base 2 : emitter 3 : collector top view za 1 2 3
15GN01NA no. a1105-3/5 0 20 40 60 80 100 120 140 160 0 50 100 150 200 250 300 350 400 450 it07405 collector dissipation, p c -- mw p c -- ta 1 2 4 3 6 5 7 8 9 10 0.1 23 57 23 5 1.0 ron -- i b base current, i b -- ma ambient temperature, ta -- c output on resistance, ron -- it05403 f=10khz in out 1k 10k i b 3 1.0 57 2 3 57 10 23 57 2 3 5 7 0.1 2 0.01 collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v it06249 v ce (sat) -- i c i c / i b =10 collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf it07404 cre -- v cb 3 5 5 7 1.0 2 3 1.0 23 57 23 57 10 100 f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- ghz it07402 v ce =5v cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf it07403 0.1 23 5 5 723 7 1.0 10 5 7 2 5 3 1.0 f=1mhz 0.1 23 57 1.0 23 57 10 5 7 2 5 3 1.0 f=1mhz
15GN01NA no. a1105-4/5 s parameters (common emitter) v ce =5v, i c =5ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.679 --22.58 4.139 116.73 0.032 73.31 0.753 --12.33 200 0.580 --32.46 2.688 103.88 0.061 70.84 0.727 --16.89 300 0.499 --42.23 2.117 92.82 0.087 66.96 0.703 --22.87 400 0.424 --51.43 1.807 81.91 0.111 62.96 0.682 --28.63 500 0.349 --61.62 1.615 70.91 0.135 58.65 0.660 --35.63 600 0.262 --71.70 1.468 60.67 0.158 54.60 0.629 --42.07 700 0.192 --84.86 1.372 50.52 0.181 51.41 0.605 --48.82 800 0.118 --108.67 1.295 39.92 0.205 47.69 0.571 --57.87 900 0.073 --160.50 1.241 29.90 0.231 44.42 0.539 --66.04 1000 0.103 145.75 1.176 19.87 0.258 40.51 0.508 --76.99 v ce =5v, i c =10ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.609 --25.35 5.809 112.60 0.031 75.01 0.685 --12.89 200 0.501 --36.26 3.667 99.43 0.058 72.48 0.659 --16.87 300 0.414 --46.23 2.800 87.86 0.084 69.11 0.635 --22.47 400 0.335 --55.33 2.316 76.81 0.109 65.86 0.615 --27.84 500 0.260 --65.69 2.015 66.02 0.134 61.84 0.595 --34.52 600 0.177 --76.44 1.787 56.16 0.159 57.57 0.564 --40.75 700 0.114 --92.81 1.635 46.31 0.184 54.11 0.540 --47.33 800 0.058 --140.97 1.517 36.10 0.212 49.91 0.505 --56.20 900 0.077 143.92 1.431 26.37 0.240 45.96 0.471 --64.20 1000 0.138 119.67 1.339 16.71 0.269 41.37 0.437 --75.11 v ce =5v, i c =20ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.527 --29.52 7.559 108.11 0.030 76.02 0.623 --12.91 200 0.410 --41.38 4.581 93.88 0.057 74.93 0.600 --16.23 300 0.321 --51.81 3.369 81.99 0.083 71.96 0.580 --21.57 400 0.243 --61.31 2.711 70.96 0.109 68.01 0.563 --26.84 500 0.172 --73.24 2.304 60.45 0.135 63.89 0.545 --33.46 600 0.095 --90.10 2.005 50.91 0.162 59.42 0.515 --39.60 700 0.047 --132.96 1.802 41.36 0.189 55.50 0.491 --46.17 800 0.070 143.26 1.650 31.52 0.219 50.95 0.455 --55.15 900 0.135 116.79 1.535 22.05 0.249 46.42 0.418 --63.06 1000 0.198 106.08 1.422 12.75 0.279 41.29 0.382 --74.27 v ce =5v, i c =30ma, z o =50 freq(mhz) ? s 11 ? s 11 ? s 21 ? s 21 ? s 12 ? s 12 ? s 22 ? s 22 100 0.472 --32.94 8.468 104.99 0.029 78.19 0.591 --12.70 200 0.352 --45.65 4.970 90.19 0.056 76.06 0.572 --15.72 300 0.263 --56.94 3.580 78.26 0.083 72.60 0.554 --21.08 400 0.187 --68.09 2.838 67.30 0.110 68.99 0.539 --26.31 500 0.119 --84.10 2.386 56.82 0.136 65.03 0.522 --32.99 600 0.053 --121.65 2.056 47.51 0.164 60.04 0.492 --39.20 700 0.053 160.07 1.832 38.08 0.193 55.97 0.467 --45.88 800 0.115 124.21 1.664 28.36 0.223 50.92 0.430 --54.94 900 0.182 109.00 1.537 19.11 0.254 46.26 0.391 --62.99 1000 0.244 100.79 1.417 9.97 0.284 40.99 0.354 --74.28
15GN01NA no. a1105-5/5 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of october, 2009. specifications and information herein are subject to change without notice.


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